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參數(shù)資料
| 型號(hào)： | MSC80197 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors General Purpose Linear Applications(用于通用線(xiàn)性電路的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | MSC80197 |
October 1992
GENERAL PURPOSE LINEAR APPLICATIONS
.
EMITTER BALLASTED
.
CLASS A LINEAR OPERATION
.
COMMON EMITTER
.
VSWR CAPABILITY 15:1 @ RATED
CONDITIONS
.
ft 3.2 GHz TYPICAL
.
NOISE FIGURE 12.5 dB @ 2 GHz
.
P
OUT
=
31.7 dBm MIN. @ 2.0 GHz
RF & MICROWAVE TRANSISTORS
.250 2LFL (S011)
hermetically sealed
DESCRIPTION
The MSC80197 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
PIN CONNECTION
BRANDING
80197
ORDER CODE
MSC80197
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CE
T
J
T
STG
Parameter
(see Safe Area)
Value
—
Unit
W
Power Dissipation
Device Bias Current
Collector-Emitter Bias Voltage*
700
20
mA
V
°
C
°
C
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
8.5
°
C/W
*Applies only to rated RF amplifier operation
MSC80197
1. Collector
2. Emitter
3. Base
4. Emitter
THERMAL DATA
1/6
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