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參數(shù)資料
| 型號： | MSC81400M |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors Avionics Applications(用于航空電子的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 64K |
| 代理商： | MSC81400M |
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
MSC81400M
.
REFRACTORY\GOLD METALLIZATION
.
RUGGEDIZED VSWR 25:1
.
INTERNAL INPUT/OUTPUT MATCHING
.
LOW THERMAL RESISTANCE
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
400 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The MSC81400M "Super Power" transistor is a
high peak pulse power device specifically de-
signed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum
25:1 load mismatch condition at any phase angle
under full rated conditions.
The MSC81400M is housed in the unique BIG-
PAC hermetic metal/ceramic package with inter-
nal input/output matching structures.
PIN CONNECTION
BRANDING
81400M
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
80C)
Value
1000
Unit
W
Power Dissipation*
Device Current*
Collector-Supply Voltage*
28
55
A
V
°
C
°
C
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
0.12
°
C/W
*Applies only to rated RF amplifier operation
MSC81400M
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/3
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