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參數(shù)資料
| 型號： | MSD42SWT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon General Purpose High Voltage Transistor |
| 中文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | MSD42SWT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
MSD42SWT1/D
MSD42SWT1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
300
Vdc
Collector-Emitter Voltage
V
(BR)CEO
300
Vdc
Emitter-Base Voltage
V
(BR)EBO
6.0
Vdc
Collector Current Continuous
I
C
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
150
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 100 Adc, I
E
= 0)
V
(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
I
CBO
0.1
A
EmitterBase Cutoff Current
(V
EB
= 6.0 Vdc, I
B
= 0)
I
EBO
0.1
A
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc)
(V
CE
= 10 Vdc, I
C
= 30 mAdc)
h
FE1
h
FE2
25
40
200
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 200 mAdc,
I
B
= 2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
≤
300 s, D.C.
≤
2%.
V
CE(sat)
0.5
Vdc
SC70 (SOT323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
MSD42SWT1
SC70/SOT323
3000/Tape & Reel
D4
M
= Device Code
= Date Code*
= PbFree Package
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MSD42SWT1G SC70/SOT323
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
D4 M
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MSD42SWT1G_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistor |
| MSD42T1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistors |
| MSD42T1G | 功能描述:兩極晶體管 - BJT SS XSTR HV 300V TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD42WT1 | 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD42WT1G | 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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