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| 型號(hào)： | MSM5117805F-70TS-K |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 2,097,152-Word 】 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| 中文描述： | 2097152詞】8位動(dòng)態(tài)隨機(jī)存儲(chǔ)器：快速頁(yè)面模式型與江戶 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | MSM5117805F-70TS-K |
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FEDD5117805F-01
1
Semiconductor
MSM5117805F
9/16
Notes: 1. A start-up delay of 200
μ
s is required after power-up, followed by a minimum of eight initialization
cycles (
RAS
-only refresh or
CAS
before
RAS
refresh) before proper device operation is achieved.
2. The AC characteristics assume t
T
= 2ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring input timing signals. Transition times (t
T
)
are measured between V
IH
and V
IL
.
4. -50 is measured with a load circuit equivalent to 2TTL load and 50pF, and -60/-70 is measured with a
load circuit equivalent to 2TTL load and 100pF.
5. Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(Max.) limit,
then the access time is controlled by t
CAC
.
6. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only. If t
RAD
is greater than the specified t
RAD
(Max.) limit,
then the access time is controlled by t
AA
.
7. t
CEZ
(Max.), t
REZ
(Max.), t
WEZ
(Max.), and t
OEZ
(Max.) define the time at which the output achieved the
open circuit condition and are not referenced to output voltage levels.
8. t
CEZ
, and t
REZ
must be satisfied for open circuit condition.
9. t
RCH
or t
RRH
must be satisfied for a read cycle.
10.t
WCS
, t
CWD
, t
RWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If t
WCS
≥
t
WCS
(Min.), then the cycle is an early write cycle and
the data out will remain open circuit (high impedance) throughout the entire cycle. If t
CWD
≥
t
CWD
(Min.), t
RWD
≥
t
RWD
(Min.), t
AWD
≥
t
AWD
(Min.) and t
CPWD
≥
t
CPWD
(Min.), then the cycle is a read modify
write cycle and data out will contain data read from the selected cell; if neither of the above sets of
conditions is satisfied, then the condition of the data out (at access time) is indeterminate.
11.These parameters are referenced to the
CAS
, leading edges in an early write cycle, and to the
WE
leading edge in an
OE
control write cycle, or a read modify write cycle.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM5117805F-XXJS | 2,097,152-Word 】 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM5117805F-XXTS-K | 2,097,152-Word 】 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM5118160A | 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5118160B | 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5118160D | 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM5117805F-XXJS | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word 】 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM5117805F-XXTS-K | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word 】 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM5118160A | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5118160B | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM5118160D | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
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