參數(shù)資料
型號: MSM514260E-70JS
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
中文描述: 262,144字× 16位動態(tài)隨機(jī)存儲器:快速頁面模式型
文件頁數(shù): 6/15頁
文件大?。?/td> 144K
代理商: MSM514260E-70JS
MSM514260E
6/14
AC Characteristic (1/2)
(V
CC
= 5V ± 10%, Ta = 0°C to 70°C) Note1,2,3
MSM514260
E-60
MSM514260
E-70
Parameter
Symbol
Min.
Max.
Min.
Max.
Unit
Note
Random Read or Write Cycle Time
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
OEA
t
CLZ
t
OFF
t
OEZ
t
T
t
REF
t
RP
t
RAS
t
RASP
t
RSH
t
ROH
t
CP
t
CAS
t
CSH
t
CRP
t
RHCP
t
RCD
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
110
130
ns
Read Modify Write Cycle Time
155
185
ns
Fast Page Mode Cycle Time
40
45
ns
Fast Page Mode Read Modify Write Cycle Time
85
100
ns
Access Time from
RAS
60
70
ns
4,5,6
Access Time from
CAS
15
20
ns
4,5
Access Time from Column Address
30
35
ns
4,6
Access Time from
CAS
Precharge
35
40
ns
4,12
Access Time from
OE
15
20
ns
4
Output Low Impedance Time from
CAS
0
0
ns
4
CAS
to Data Output Buffer Turn-off Delay Time
0
15
0
15
ns
7
OE
to Data Output Buffer Turn-off Delay Time
0
15
0
15
ns
7
Transition Time
3
50
3
50
ns
3
Refresh Period
8
8
ms
RAS
Precharge Time
40
50
ns
RAS
Pulse Width
60
10,000
70
10,000
ns
RAS
Pulse Width (Fast Page Mode)
60
100,000
70
100,000
ns
RAS
Hold Time
15
20
ns
RAS
Hold Time referenced to
OE
15
20
ns
CAS
Precharge Time (Fast Page Mode)
10
10
ns
14
CAS
Pulse Width
15
10,000
20
10,000
ns
CAS
Hold Time
60
70
ns
CAS
to
RAS
Precharge Time
5
5
ns
12
RAS
Hold Time from
CAS
Precharge
35
40
ns
12
RAS
to
CAS
Delay Time
20
45
20
50
ns
5
RAS
to Column Address Delay Time
15
30
15
35
ns
6
Row Address Set-up Time
0
0
ns
Row Address Hold Time
10
10
ns
Column Address Set-up Time
0
0
ns
11
Column Address Hold Time
10
15
ns
11
相關(guān)PDF資料
PDF描述
MSM514260E-70TS-K 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM514260E-60 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM514265B 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE
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