參數(shù)資料
型號(hào): MSM518222A-25JS
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 262,214-Word X 8-Bit Field Memory
中文描述: 262214字× 8位字段記憶
文件頁數(shù): 10/17頁
文件大?。?/td> 190K
代理商: MSM518222A-25JS
Semiconductor
MSM518222A
10/16
Notes: 1.
Input signal reference levels for the parameter measurement are V
IH
= 3.0 V and V
IL
= 0 V. The transition time t
T
is defined to be a transition time that signal transfers
between V
IH
= 3.0 V and V
IL
= 0 V.
2.
AC measurements assume t
T
= 3 ns.
3.
Read address must have more than a 600 address delay than write address in every
cycle when asynchronous read/write is performed.
4.
Read must have more than a 600 address delay than write in order to read the data
written in a current series of write cycles which has been started at last write reset
cycle: this is called "new data read".
When read has less than a 70 address delay than write, the read data are the data
written in a previous series of write cycles which had been written before the last
write reset cycle: this is called "old data read".
5.
When the read address delay is between more than 71 and less than 599, read data
will be undetermined. However, normal write is achieved in this address condition.
6.
Outputs are measured with a load equivalent to 1 TTL load and 30 pF.
Output reference levels are V
OH
= 2.4 V and V
OL
= 0.8 V.
相關(guān)PDF資料
PDF描述
MSM518222A-25ZS 262,214-Word X 8-Bit Field Memory
MSM518222A-30GS-K 262,214-Word X 8-Bit Field Memory
MSM518222A-30JS 262,214-Word X 8-Bit Field Memory
MSM518222A-30ZS 262,214-Word X 8-Bit Field Memory
MSM518222A-40GS-K 262,214-Word X 8-Bit Field Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSM518222A-25Z3 制造商:ROHM Semiconductor 功能描述:
MSM518222A-25ZS 制造商:ROHM Semiconductor 功能描述:
MSM518222A-30GS-K 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:262,214-Word X 8-Bit Field Memory
MSM518222A-30JS 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:262,214-Word X 8-Bit Field Memory
MSM518222A-30JS3 制造商:ROHM Semiconductor 功能描述: