參數資料
型號: MSM51V16165F
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
中文描述: 1,048,576詞】16位動態(tài)隨機存儲器:快速頁面模式型與江戶
文件頁數: 5/16頁
文件大小: 239K
代理商: MSM51V16165F
FEDD51V16165F-03
1
Semiconductor
MSM51V16165F
5/16
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, Ta = 0 to 70°C)
MSM51V16165
F-50
MSM51V16165
F-60
MSM51V16165
F-70
Parameter
Symbol
Condition
Min.
Max.
Min.
Max.
Min.
Max.
Unit Note
Output High Voltage V
OH
I
OH
=
2.0mA
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 2mA
0
0.4
0
0.4
0
0.4
V
Input Leakage
Current
I
LI
0V
V
I
V
CC
+0.3V;
All other pins not
under test = 0V
10
10
10
10
10
10
μ
A
Output Leakage
Current
I
LO
DQ disable
0V
V
O
V
CC
10
10
10
10
10
10
μ
A
Average Power
Supply Current
(Operating)
I
CC1
RAS
,
CAS
cycling,
t
RC
= Min.
75
70
65
mA
1,2
RAS
,
CAS
= V
IH
2
2
2
Power Supply
Current
(Standby)
I
CC2
RAS
,
CAS
V
CC
0.2V
0.5
0.5
0.5
mA
1
Average Power
Supply Current
(
RAS
-only Refresh)
I
CC3
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
75
70
65
mA
1,2
Power Supply
Current
(Standby)
I
CC5
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
5
5
5
mA
1
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
I
CC6
RAS
= cycling,
CAS
before
RAS
75
70
65
mA
1,2
Average Power
Supply Current
(Fast Page Mode)
I
CC7
RAS
= V
IL
,
CAS
cycling,
t
HPC
= Min.
75
70
65
mA
1,3
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
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MSM51V16165F-50TS-K 1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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參數描述
MSM51V16165F-50TS-K 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM51V16165F-60TS-K 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM51V16165F-70TS-K 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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