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參數(shù)資料
| 型號： | MSM51V16805DSL-70JS |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| 中文描述： | 2097152字× 8位動態(tài)隨機存儲器：快速頁面模式型與江戶 |
| 文件頁數(shù)： | 8/17頁 |
| 文件大?。?/td> | 859K |
| 代理商： | MSM51V16805DSL-70JS |
Semiconductor
MSM51V16805D/DSL
8/17
Notes:
1. A start-up delay of 200
μ
s is required after power-up, followed by a minimum of eight
initialization cycles (
RAS
-only refresh or
CAS
before
RAS
refresh) before proper device
operation is achieved.
2. The AC characteristics assume t
T
= 2 ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring input timing signals.
Transition times (t
T
) are measured between V
IH
and V
IL
.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF.
The output timing reference levels are V
OH
= 2.0 V and V
OL
= 0.8 V.
5. Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RCD
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified
t
RCD
(Max.) limit, then the access time is controlled by t
CAC
.
6. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only. If t
RAD
is greater than the specified
t
RAD
(Max.) limit, then the access time is controlled by t
AA
.
7. t
CEZ
(Max.), t
REZ
(Max.), t
WEZ
(Max.) and t
OEZ
(Max.) define the time at which the
output achieves the open circuit condition and are not referenced to output voltage
levels.
8. t
CEZ
and t
REZ
must be satisfied for open circuit condition.
9. t
RCH
or t
RRH
must be satisfied for a read cycle.
10. t
WCS
, t
CWD
, t
RWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If t
WCS
≥
t
WCS
(Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If t
CWD
≥
t
CWD
(Min.) , t
RWD
≥
t
RWD
(Min.),
t
AWD
≥
t
AWD
(Min.) and t
CPWD
≥
t
CPWD
(Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
11. These parameters are referenced to the
CAS
leading edge in an early write cycle, and
to the
WE
leading edge in an
OE
control write cycle, or a read modify write cycle.
12. The test mode is initiated by performing a
WE
and
CAS
before
RAS
refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a
RAS
-only refresh cycle or a
CAS
before
RAS
refresh cycle.
13. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
14. Only SL version.
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| MSM51V16805DSL-70TS-K | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
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