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參數(shù)資料
| 型號： | MSM51V64805 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 8M×8 Dynamic RAM(8M×8動態(tài)RAM) |
| 中文描述： | 8米× 8動態(tài)RAM（8米× 8動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 661K |
| 代理商： | MSM51V64805 |
7/15
Semiconductor
MSM51V64805
AC Characteristics (2/2)
MSM51V64805
-60
MSM51V64805
-50
Write Command Pulse Width
WE
Pulse Width (DQ Disable)
Write Command to
CAS
Lead Time
Data-in Set-up Time
Data-in Hold Time
OE
to Data-in Delay Time
Write Command to
RAS
Lead Time
CAS
to
WE
Delay Time
Column Address to
WE
Delay Time
RAS
to
WE
Delay Time
CAS
Precharge
WE
Delay Time
RAS
to
CAS
Hold Time (
CAS
before
RAS
)
WE
to
RAS
Precharge Time (
CAS
before
RAS
)
t
WRP
WE
Hold Time from
RAS
(
CAS
before
RAS
)
CAS
Active Delay Time from
RAS
Precharge
RAS
to
CAS
Set-up Time (
CAS
before
RAS
)
Write Command Hold Time
OE
Command Hold Time
OE
Precharge Time
OE
Command Hold Time
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
Write Command Set-up Time
t
WP
t
WPE
t
CWL
t
DS
t
DH
t
OED
t
RWL
t
CWD
t
AWD
t
RWD
t
CPWD
t
CHR
t
RPC
t
CSR
t
WCH
t
OEH
t
OEP
t
OCH
t
WCS
Parameter
Symbol
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit Note
11
11
10
10
10
10
10
t
WRH
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to
RAS
ns
ns
ns
t
RCS
t
RCH
t
RRH
9
9
Min.
0
0
0
10
10
10
0
10
15
10
34
49
79
54
10
10
10
5
5
10
10
10
10
0
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
0
0
0
7
7
7
0
7
7
30
42
67
47
10
10
10
5
5
7
7
7
7
13
0
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
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