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參數(shù)資料
| 型號(hào)： | MSM5412222A |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,214-Word x 12-Bit Field Memory |
| 中文描述： | 262214字× 12位場(chǎng)記憶 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | MSM5412222A |
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OKI
Semiconductor
MSM5412222A
10
1. Input signal reference levels for the parameter measurement are V
IH
= 3.0 V and V
IL
= 0 V.
The transition time t
T
is defined to be a transition time that signal transfers between V
IH
=
3.0 V and V
IL
= 0 V.
2. AC measurements assume t
T
= 3 ns.
3. Read address must have more than a 600 address delay than write address in every cycle
when asynchronous read/write is performed.
4. Read must have more than a 600 address delay than write in order to read the data
written in a current series of write cycles which has been started at last write reset cycle:
this is called "new data read".
When read has less than a 70 address delay than write, the read data are the data written
in a previous series of write cycles which had been written before at last write reset cycle:
this is called "old data read".
5. When the read address delay is between more than 71 and less than 599, read data will
be undetermined. However, normal write is achieved in this address condition.
6. Outputs are measured with a load equivalent to 1 TTL load and 30 pF. Output reference
levels are V
OH
= 2.0 V and V
OL
= 0.8 V.
Notes:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM5412222B | 262,214-Word 】 12-Bit Field Memory |
| MSM5412222B-25JS | 262,214-Word 】 12-Bit Field Memory |
| MSM5412222B-25TS-K | 262,214-Word 】 12-Bit Field Memory |
| MSM5412222B-30JS | 262,214-Word 】 12-Bit Field Memory |
| MSM5412222B-30TS-K | 262,214-Word 】 12-Bit Field Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM5412222A-25TK | 制造商:OK International 功能描述: |
| MSM5412222B-25JS | 制造商:ROHM Semiconductor 功能描述: |
| MSM5412222B-25T3K-MT | 制造商:ROHM Semiconductor 功能描述: |
| MSM5412222B-25TS-K | 制造商:ROHM Semiconductor 功能描述: |
| MSM5416258A-35J | 制造商:OK International 功能描述: |
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