參數(shù)資料
型號(hào): MSM5416125A-60JS
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
中文描述: 131,072字× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器:快速頁面模式型
文件頁數(shù): 8/20頁
文件大?。?/td> 254K
代理商: MSM5416125A-60JS
8/20
Semiconductor
MSM5416125A
Notes:
1. An initial pause of 200
m
s is required after power-up, followed by any 8
RAS
cycles.
(Example :
RAS
-only-refresh) before proper device operation is achieved.
2. The AC characteristics assume t
T
= 5 ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring timing of input signals.
Also, transition times are measured between V
IH
and V
IL
.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 50 pF.
Output timing reference levels are V
OH
= 2.0 V and V
OL
= 0.8 V.
5. t
OFF
(Max.) and t
OEZ
(Max.) define the time at which the outputs achieve the open
circuit condition and are not referenced to output voltage levels.
6. t
RCH
or t
RRH
must be satisfied for a read cycle.
7. These parameters are referenced to
UCAS
,
LCAS
, leading edge in an early write cycle,
and to
WE
leading edge in an
OE
control write cycle or a read modify write cycle.
8. t
WCS
, t
CWD
, t
RWD
and t
AWD
are not restrictive operating parameters. They are included
in the data sheet as electrical characteristics only. If t
WCS
t
WCS
(Min.), the cycle is an
early write cycle and the data out will remain open circuit (high impedance) throughout
the entire cycle. If t
CWD
t
CWD
(Min.) , t
RWD
t
RWD
(Min.) and t
AWD
t
AWD
(Min.) ,
the cycle is a read modify write cycle and data out will contain data read from the
selected cell; if neither of the above sets of conditions is satisfied, the condition of the
data out (at access time) is indeterminate.
9. Operation within the t
RCD
(Max.) limit insures that t
RAC
(Max.) can be met.
t
RCD
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified
t
RCD
(Max.) limit, then access time is controlled by t
CAC
.
10. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only: If t
RAD
is greater than the specified
t
RAD
(Max.) limit, then access time is controlled by t
AA
.
11. These parameters are determined by the falling edge of
UCAS
or
LCAS
, whichever is
earlier.
12. These parameters are determined by the rising edge of
UCAS
or
LCAS
, whichever is
later.
13. t
CWL
should be satisfied by both
UCAS
and
LCAS
.
14. t
CP
is determined by the time both
UCAS
and
LCAS
are high.
15. Input levels at the AC testing are 3.0 V/0.5 V.
相關(guān)PDF資料
PDF描述
MSM5416125A-60TS-K 131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-XXJS 131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-XXTS-K 131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416126A 131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM5416126A-40JS 131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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