- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378678 > MSM5416258A (OKI SEMICONDUCTOR CO., LTD.) 262,144-Word×16-Bit DYNAMIC RAM(256K字×16位動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | MSM5416258A |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,144-Word×16-Bit DYNAMIC RAM(256K字×16位動態(tài)RAM) |
| 中文描述： | 262,144字× 16位動態(tài)隨機(jī)存儲器（256K字× 16位動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 263K |
| 代理商： | MSM5416258A |
7/21
Semiconductor
MSM5416258A
AC Characteristics (2/2)
Parameter
0
5
5
10
0
6
6
10
(V
CC
= 5 V
±
10%, Ta = 0°C to 70°C)
22
5
5
7
0
0
0
5
30
6
6
8
0
0
0
6
22
7
5
5
6
30
8
10
10
10
18
27
40
22
32
50
0
0
6
10
6
10
Note
11
10
10
11
11
11
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
Min.
0
0
Min.
0
0
MSM5416258A
-40
MSM5416258A
-30
MSM5416258A
-35
Min.
0
0
0
6
6
26
6
6
8
0
0
0
6
26
8
8
8
8
20
30
45
0
8
8
Write Command Set-up Time
Write Command Hold Time
Write Command Pulse Width
WE
Pulse Width (DQ Disable)
Write Command Hold Time from
RAS
OE
Command Hold Time
Write Command to
CAS
Lead Time
Write Command to
RAS
Lead Time
Data to
CAS
Delay Time
Data to
OE
Delay Time
Data-in Set-up Time
Data-in Hold Time
Data-in Hold Time referenced to
RAS
OE
to Data-in Delay Time
OE
"L" to
CAS
"H" Lead Time
CAS
"H" to
OE
"L" Lead Time
Hi-Z Command Pulse Width
RAS
to
WE
Delay Time
CAS
Active Delay Time
from
RAS
Precharge
RAS
to
CAS
Set-up Time
(
CAS
before
RAS
)
RAS
to
CAS
Hold Time
(
CAS
before
RAS
)
CAS
to
WE
Delay Time
Column Address to
WE
Delay Time
t
WCS
t
WCH
t
WP
t
WEP
t
WCR
t
OEH
t
CWL
t
RWL
t
DZC
t
DZO
t
DS
t
DH
t
DHR
t
OED
t
OCH
t
CHO
t
OEP
t
RWD
t
RPC
t
CSR
t
CHR
t
CWD
t
AWD
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time
Reference to
RAS
0
0
—
—
9
9
ns
ns
ns
t
RCS
t
RCH
t
RRH
—
0
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM5416262 | 262,144-Word ×16-Bit Multiport DRAM(256k字×16位多端口動態(tài)RAM) |
| MSM5416263 | 262,144-Word ×16-Bit Multiport DRAM(256k字×16位多端口動態(tài)RAM) |
| MSM548128BL | 131,072-Word ×8-Bit High-Speed PSRAM(128k字×8位高速偽靜態(tài)RAM) |
| MSM548332 | 278,400-Word×12-Bit Field Memory(278,400字×12位場存儲器) |
| MSM54V32126A | 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM5416258A-35J | 制造商:OK International 功能描述: |
| MSM5416258B-30JS | 制造商:OK International 功能描述:Dynamic RAM, EDO, 256K x 16, 40 Pin, Plastic, SOJ |
| MSM5416258B-30T3-K | 制造商:ROHM Semiconductor 功能描述: |
| MSM5416263-60G3-K | 制造商:ROHM Semiconductor 功能描述: |
| MSM5416263-60GS-K | 制造商:ROHM Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。