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參數(shù)資料
| 型號： | MSM548128BL-80GS-K |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 131,072-Word X 8-Bit High-Speed PSRAM |
| 中文描述： | 131,072字× 8位高速移動存儲芯片 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 182K |
| 代理商： | MSM548128BL-80GS-K |
Semiconductor
MSM548128BL
5/12
DC Characteristics
I
SB1
Parameter
Operating Current
Symbol
I
CC1
Unit
mA
—
mA
—
Min.
Standby Current
I
CC2
m
A
I
SB2
—
mA
—
Self Refresh Current
I
LI
I
LO
m
A
I
CC3
—
m
A
m
A
V
V
–10
–10
—
2.4
Input Leakage Current
Output Leakage Current
Output Low Level
Output High Level
V
OL
V
OH
60
1
Typ.
100
1
100
—
—
—
—
85
2
Max.
200
2
200
10
10
0.4
—
Condition
I
I/O
= Open, t
cyc
= min.
CE
= V
IH
,
RFSH
= V
IH
,
V
IN
≥
0 V
CE
≥
V
CC
– 0.2 V,
RFSH
≥
V
CC
– 0.2 V, V
IN
≥
0
V
V
CC
= 5.5 V, V
IN
= V
SS
to V
CC
OE
= V
IH
, V
I/O
= V
SS
to V
CC
I
OL
= 2.1 mA
I
OH
= –1 mA
CE
= V
IH
,
RFSH
= V
IL
,
V
IN
≥
0
V
CE
≥
V
CC
– 0.2 V, V
IN
≥
0
V,
RFSH
￡
0.2 V
(V
CC
= 5 V ±10%, V
SS
= 0 V, Ta = 0°C to 70°C)
Capacitance
C
I/O
Parameter
Input Capacitance
I/O Pin Capacitance
Symbol
C
IN
Unit
pF
pF
—
—
Min.
—
—
Typ.
8
10
Max.
Condition
V
IN
= 0 V
V
I/O
= 0 V
Note:
This parameter is periodically sampled and is not 100% tested.
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