參數(shù)資料
型號(hào): MSM548128BL
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 131,072-Word ×8-Bit High-Speed PSRAM(128k字×8位高速偽靜態(tài)RAM)
中文描述: 131,072詞× 8位高速移動(dòng)存儲(chǔ)芯片(128K的字× 8位高速偽靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 181K
代理商: MSM548128BL
Semiconductor
MSM548128BL
5/12
DC Characteristics
I
SB1
Parameter
Operating Current
Symbol
I
CC1
Unit
mA
mA
Min.
Standby Current
I
CC2
m
A
I
SB2
mA
Self Refresh Current
I
LI
I
LO
m
A
I
CC3
m
A
m
A
V
V
–10
–10
2.4
Input Leakage Current
Output Leakage Current
Output Low Level
Output High Level
V
OL
V
OH
60
1
Typ.
100
1
100
85
2
Max.
200
2
200
10
10
0.4
Condition
I
I/O
= Open, t
cyc
= min.
CE
= V
IH
,
RFSH
= V
IH
,
V
IN
0 V
CE
V
CC
– 0.2 V,
RFSH
V
CC
– 0.2 V, V
IN
0
V
V
CC
= 5.5 V, V
IN
= V
SS
to V
CC
OE
= V
IH
, V
I/O
= V
SS
to V
CC
I
OL
= 2.1 mA
I
OH
= –1 mA
CE
= V
IH
,
RFSH
= V
IL
,
V
IN
0
V
CE
V
CC
– 0.2 V, V
IN
0
V,
RFSH
0.2 V
(V
CC
= 5 V ±10%, V
SS
= 0 V, Ta = 0°C to 70°C)
Capacitance
C
I/O
Parameter
Input Capacitance
I/O Pin Capacitance
Symbol
C
IN
Unit
pF
pF
Min.
Typ.
8
10
Max.
Condition
V
IN
= 0 V
V
I/O
= 0 V
Note:
This parameter is periodically sampled and is not 100% tested.
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