參數(shù)資料
型號： MSM54V16273
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 262,144-Word x 16-Bit Multiport DRAM
中文描述： 262,144字× 16位多端口內存
文件頁數(shù)： 1/25頁
文件大小： 303K
代理商： MSM54V16273
1/25
Semiconductor
MSM54V32126/8
This version: Jan. 1998
Previous version: Dec. 1996
DESCRIPTION
The MSM54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word
￥
32-bit
configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CMOS silicon gate
process technology. The device operates with a single 3.3 V power supply.
FEATURES
131,072-word
￥
32-bit organization
Single 3.3 V power supply,
±
0.3 V tolerance
Refresh: 512 cycles/8 ms
Fast Page Mode with Extended Data Out (EDO)
Write per bit (MSM54V32128 only)
Byte write, Byte read
RAS
only refresh
CAS
before
RAS
refresh
CAS
before
RAS
self-refresh
Hidden refresh
Package:
64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K)
(Product : MSM54V32126-xxGS-K)
(Product : MSM54V32128-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
131,072-Word
￥
32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
Peimnay
Family
t
RAC
50 ns
60 ns
Operating (Max.)
504 mW
486 mW
Power Dissipation
Cycle Time
(Min.)
110 ns
130 ns
MSM54V32126/8-50
MSM54V32126/8-60
t
AA
25 ns
30 ns
t
CAC
15 ns
18 ns
Standby (Max.)
Access Time (Max.)
3.1 mW
t
OEA
15 ns
18 ns
E2L0046-17-Y1
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MSM54V16282 262,144-Word x 16-Bit Multiport DRAM
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