- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378014 > MSM54V16282 (OKI SEMICONDUCTOR CO., LTD.) 262,144-Word x 16-Bit Multiport DRAM PDF資料下載
參數(shù)資料
| 型號： | MSM54V16282 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,144-Word x 16-Bit Multiport DRAM |
| 中文描述： | 262,144字× 16位多端口內(nèi)存 |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 303K |
| 代理商： | MSM54V16282 |
6/25
Semiconductor
MSM54V32126/8
AC Characteristics (1/2)
Parameter
Symbol
Note
Unit
—
—
t
RC
t
RWC
t
PRWC
t
RAC
t
AA
t
CAC
t
CPA
t
REZ
t
CEZ
t
RASP
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
RAL
t
CRP
t
CP
Max.
—
—
Min.
130
170
Max.
Min.
110
145
MSM54V32126/8
-60
MSM54V32126/8
-50
—
50
—
t
HPC
t
T
t
RP
t
RAS
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
t
RCS
t
RCH
t
RRH
t
CRL
t
RCL
t
DOH
t
WCS
t
WCH
Access Time from Column Address
Access Time from
CAS
Access Time from
CAS
Precharge
Output Buffer Turn-off Delay Time from
RAS
Output Buffer Turn-off Delay Time from
CAS
Column Address Hold Time referenced to
RAS
Read Command Set-up Time
Column Address Set-up Time
Column Address Hold Time
Row Address Set-up Time
Row Address Hold Time
CAS
Pulse Width
RAS
to
CAS
Delay Time
RAS
to Column Address Delay Time
Column Address to
RAS
Lead Time
CAS
Precharge Time (Hyper Page Mode)
CAS
to
RAS
Precharge Time
CAS
Hold Time
Fast Page Mode Cycle Time
Fast Page Mode Read-Modify-Write Cycle Time
Access Time from
RAS
RAS
Pulse Width (Hyper Page Mode Only)
RAS
Hold Time
Random Read or Write Cycle Time
Read Modify Write Cycle
Read Command Hold Time
Read Command Hold Time referenced to
RAS
CAS
"H" to
RAS
"H" Lead Time
RAS
"H" to
CAS
"H" Lead Time
Data Output Hold after
CAS
Low
RAS
Precharge Time
RAS
Pulse Width
Transition Time (Rise and Fall)
Write Command Set-up Time
Write Command Hold Time
ns
ns
ns
ns
ns
ns
ns
30
18
35
20
20
—
—
—
3
3
25
15
30
20
20
—
—
—
3
3
ns
ns
ns
35
—
10k
3
35
—
10k
3
ns
ns
ns
100k
—
—
60
14
60
100k
—
—
50
14
50
ns
ns
—
60
80
—
70
—
ns
ns
ns
ns
ns
ns
10k
42
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9
10k
35
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8
9
20
15
28
8
9
20
15
24
6
8
ns
—
24
22
5
5
64
60
54
50
10
0
9
0
0
7
0
8
10
40
0
0
0
0
0
3
35
0
0
0
0
0
6, 12
6
0
0
8
10
4, 10
4, 9
4, 13
4, 9, 10
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8, 12
12
—
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
11
13
15
12
12
12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM54V16283 | 262,144-Word x 16-Bit Multiport DRAM |
| MSM54V32162A | 131,072-Word ×32-Bit DYNAMIC RAM(128k字×32位動態(tài)RAM) |
| MSM5547 | Digital Clock |
| MSM56V16400D-12TS-K | 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM |
| MSM56V16400D | 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM54V16283-60TS-K | 制造商:ROHM Semiconductor 功能描述: |
| MSM5564 | 制造商:Panasonic Industrial Company 功能描述:I C |
| MSM56V16160J-10T3R17 | 制造商:ROHM Semiconductor 功能描述: |
| MSM56V16160J-75T3-K7 | 制造商:ROHM Semiconductor 功能描述: |
| MSM56V16160K-8T3-K | 功能描述:IC SDRAM 16M 125MHZ 50TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。