
Semiconductor
MSM7533H/7533V/7534
10/18
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
Parameter
Power Supply Current
Input High Voltage
Input Low Voltage
High Level Input Leakage Current
Low Level Input Leakage Current
Digital Output Low Voltage
Digital Output Leakage Current
Input Capacitance
Symbol
I
DD1
I
DD2
I
DD3
V
IH
V
IL
I
IH
I
IL
V
OL
I
O
C
IN
Condition
Operating mode, No signal
Power-save mode, PDN = 1,
XSYNC or BCLK OFF
Power-down mode, PDN = 0
—
—
—
—
Pull-up resistance
>
500
W
—
—
Min.
—
—
—
2.2
0.0
—
—
0.0
—
—
Typ.
7.0
1.3
0.01
—
—
—
—
0.2
—
5
Max.
14.0
3.0
0.05
V
DD
0.8
2.0
0.5
0.4
10
—
Unit
mA
mA
mA
V
V
m
A
m
A
V
m
A
pF
(V
DD
= +5 V ±5%, Ta = –30°C to +85°C)
Transmit Analog Interface Characteristics
Input Resistance
Output Load Resistance
Output Load Capacitance
Output Amplitude
Offset Voltage
R
INX
R
LGX
C
LGX
V
OGX
V
OSGX
AIN1, AIN2
GSX1, GSX2
with respect to SG
Gain = 1
10
20
—
–1.7
–20
—
—
—
—
—
—
—
30
+1.7
+20
M
W
k
W
pF
V
mV
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
(V
DD
= +5 V ±5%, Ta = –30°C to +85°C)
Receive Analog Interface Characteristics
Output Load Resistance
Output Load Capacitance
R
LAO
C
LAO
0.6
—
—
—
—
50
k
W
pF
Output Amplitude
Offset Voltage
V
OAO
V
OSAO
–1.7
–100
—
—
+1.7
+100
V
mV
AOUT1, AOUT2 (each) with
respect to SG
AOUT1, AOUT2
AOUT1, AOUT2, R
L
= 0.6 k
W
,
with respect to SG
AOUT1, AOUT2
with respect to SG
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
(V
DD
= +5 V ±5%, Ta = –30°C to +85°C)