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參數(shù)資料
| 型號： | MSP1N4778A |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 255K |
| 代理商： | MSP1N4778A |
8.5 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSD A L E DIVISION
1N4775 thru 1N4784A
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DESCRIPTION
APPEARANCE
The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a
selection of 8.5 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered
1N4775 thru 1N4784A series
Standard reference voltage of 8.5 V +/- 5%
Internal metallurgical bonds
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate “MX1N4779A” for a JANTX, or
MV1N4784A for a JANTXV screen.
Radiation Hardened devices available by changing
the “1N” prefix to “RH”, e.g. RH4779A, RH4784A,
etc. Also consult factory for “RH” data sheet
brochure for other radiation hardened reference
diode products.
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available from
0.01%/C to 0.0005%/C
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%, 1N4774A-
1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & StorageTemperature: -65
oC to +175oC
DC Power Dissipation: 250 mW @ TL = 25
oC
NOTE: For optimum voltage-temperature stability,
the test current IZT = 0.5 or 1.0 mA as shown in
Electrical Characteristics (less than 10 mW in
dissipated power)
Solder temperatures: 260
oC for 10 s (maximum)
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
8-19-2003 REV A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSP1N4779A | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MSP1N4779TR | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MSP1N4782TR | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MSP1N4783ATR | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MSP1N4784A | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
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