參數(shù)資料
型號： MSP430AFE252IPW
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, RISC MICROCONTROLLER, PDSO24
封裝： GREEN, PLASTIC, TSSOP-24
文件頁數(shù)： 25/47頁
文件大小： 900K
代理商： MSP430AFE252IPW
MSP430AFE2x3
MSP430AFE2x2
MSP430AFE2x1
SLAS701A
– NOVEMBER 2010 – REVISED MARCH 2011
SD24_A, External Reference Input
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VREF(I) Input voltage range
SD24REFON = 0
3 V
1.0
1.25
1.5
V
IREF(I)
Input current
SD24REFON = 0
3 V
50
nA
USART0
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fUSART USART clock frequency
8
MHz
t(τ)
USART0: deglitch time(1)
VCC = 3 V, SYNC = 0, UART mode
150
280
500
ns
(1)
The signal applied to the USART0 receive signal/terminal (URXD0) should meet the timing requirements of t(τ) to ensure that the URXS
flip-flop is set. The URXS flip-flop is set with negative pulses meeting the minimum-timing condition of t(τ). The operating conditions to
set the flag must be met independently from this timing constraint. The deglitch circuitry is active only on negative transitions on the
URXD0 line.
Timer_A3
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
fTA
Timer_A3 clock frequency
SMCLK, Duty cycle = 50%
± 10%
fSYSTEM
MHz
tTA,cap
Timer_A3, capture timing
TA0, TA1
3 V
20
ns
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER
VCC
MIN
TYP
MAX
UNIT
CONDITIONS
VCC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time(1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
(2)
30
tFTG
tBlock, 0
Block program time for first byte or word
(2)
25
tFTG
Block program time for each additional byte or
tBlock, 1-63
(2)
18
tFTG
word
tBlock, End
Block program end-sequence wait time
(2)
6
tFTG
tMass Erase
Mass erase time
(2)
10593
tFTG
tSeg Erase
Segment erase time
(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the flash controller
's state machine (tFTG = 1 / fFTG).
Copyright
2010–2011, Texas Instruments Incorporated
31
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MSP430AFE252IPWR 功能描述:16位微控制器 - MCU 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時鐘頻率:24 MHz 程序存儲器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430AFE253IPW 功能描述:16位微控制器 - MCU 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時鐘頻率:24 MHz 程序存儲器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430AFE253IPWR 功能描述:16位微控制器 - MCU 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時鐘頻率:24 MHz 程序存儲器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430AFE2X1 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
MSP430AFE2X2 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
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