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參數(shù)資料
| 型號： | MSP430C1101 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQCC24 |
| 封裝： | PLASTIC, QFN-24 |
| 文件頁數(shù)： | 18/43頁 |
| 文件大小： | 869K |
| 代理商： | MSP430C1101 |
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MSP430C11x1, MSP430F11x1A
MIXED SIGNAL MICROCONTROLLER
SLAS241I SEPTEMBER 1999 REVISED DECEMBER 2008
25
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from VCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
See Note 1
2.7 V/ 3.6 V
4
ms
tCMErase
Cumulative mass erase time
See Note 2
2.7 V/ 3.6 V
200
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for first byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
See Note 3
21
t
tBlock, End
Block program end-sequence wait time
See Note 3
6
tFTG
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
NOTES:
1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297x1/fFTG,max = 5297x1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine (tFTG = 1/fFTG).
JTAG interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK input frequency
see Note 1
2.2 V
0
5
MHz
fTCK
TCK input frequency
see Note 1
3 V
0
10
MHz
RInternal
Internal pulldown resistance on TEST
see Note 2
2.2 V/ 3 V
25
60
90
k
Ω
NOTES:
1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TEST pull-down resistor implemented in all versions.
JTAG fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
Voltage level on TEST for fuse blow (’C11x1)
3.5
3.9
V
VFB
Voltage level on TEST for fuse blow (’F11x1A)
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES:
1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation (F versions only) features is possible. The JTAG
block is switched to bypass mode.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MSP430C1101IDW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER |
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| MSP430C1101IPW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER |
| MSP430C1101IRGE | 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER |
| MSP430C111 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLERS |
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