參數(shù)資料
型號(hào)： MSP430C1101IPM
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, MROM, 8 MHz, RISC MICROCONTROLLER
文件頁(yè)數(shù)： 10/39頁(yè)
文件大小： 762K
代理商： MSP430C1101IPM
MSP430C11x1, MSP430F11x1A
MIXED SIGNAL MICROCONTROLLER
SLAS241H SEPTEMBER 1999 REVISED SEPTEMBER 2004
18
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
optional resistors, individually programmable with ROM code (see Note 1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R(opt1)
2.5
5
10
k
R(opt2)
3.8
7.7
15
k
R(opt3)
7.6
15
31
k
R(opt4)
11.5
23
46
k
R(opt5)
Resistors, individually programmable with ROM code, all port pins,
VCC = 2.2 V/3 V
23
45
90
k
R(opt6)
Resistors, individually programmable with ROM code, all port pins,
values applicable for pulldown and pullup
VCC = 2.2 V/3 V
46
90
180
k
R(opt7)
values applicable for pulldown and pullup
70
140
280
k
R(opt8)
115
230
460
k
R(opt9)
160
320
640
k
R(opt10)
205
420
830
k
NOTE 1: Optional resistors Roptx for pulldown or pullup are not available in standard flash memory device MSP430F11x1A.
wake-up from lower power modes (LPMx)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t(LPM0)
VCC = 2.2 V/3 V
100
ns
t(LPM2)
VCC = 2.2 V/3 V
100
ns
f(MCLK) = 1 MHz,
VCC = 2.2 V/3 V
6
t(LPM3)
Delay time (see Note 1)
f(MCLK) = 2 MHz,
VCC = 2.2 V/3 V
6
s
t(LPM3)
Delay time (see Note 1)
f(MCLK) = 3 MHz,
VCC = 2.2 V/3 V
6
s
f(MCLK) = 1 MHz,
VCC = 2.2 V/3 V
6
t(LPM4)
f(MCLK) = 2 MHz,
VCC = 2.2 V/3 V
6
s
t(LPM4)
f(MCLK) = 3 MHz,
VCC = 2.2 V/3 V
6
s
NOTE 1: Parameter applicable only if DCOCLK is used for MCLK.
RAM
PARAMETER
MIN
NOM
MAX
UNIT
V(RAMh)
CPU halted (see Note 1)
1.6
V
NOTE 1: This parameter defines the minimum supply voltage VCC when the data in the program memory RAM remains unchanged. No program
execution should happen during this supply voltage condition.
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