參數(shù)資料
型號: MSP430F122IDWR
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO28
封裝: GREEN, PLASTIC, SOIC-28
文件頁數(shù): 4/42頁
文件大?。?/td> 788K
代理商: MSP430F122IDWR
MSP430x12x
MIXED SIGNAL MICROCONTROLLER
SLAS312C JULY 2001 REVISED SEPTEMBER 2004
12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
peripheral file map (continued)
PERIPHERALS WITH BYTE ACCESS (CONTINUED)
Special Function
Module enable2
Module enable1
SFR interrupt flag2
SFR interrupt flag1
SFR interrupt enable2
SFR interrupt enable1
ME2
ME1
IFG2
IFG1
IE2
IE1
005h
004h
003h
002h
001h
000h
absolute maximum ratings
Voltage applied at VCC to VSS
0.3 V to 4.1 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage applied to any pin (see Note)
0.3 V to VCC+0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode current at any device terminal
±2 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, Tstg (unprogrammed device)
55
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, Tstg (programmed device)
40
°C to 85°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE: All voltages referenced to VSS. The JTAG fuse-blow voltage, VFB, is allowed to exceed the absolute maximum rating. The voltage is applied
to the TEST pin when blowing the JTAG fuse.
recommended operating conditions
MIN
NOM
MAX
UNITS
Supply voltage during program execution V
(see Note 1)
18
36
V
Supply voltage during program execution, VCC (see Note 1)
1.8
3.6
V
Supply voltage during program/erase flash memory, VCC
2.7
3.6
V
Supply voltage, VSS
0
V
Operating free-air temperature range, TA
40
85
°C
LFXT1
t l f
f
LF mode selected, XTS=0
Watch crystal
32 768
Hz
LFXT1 crystal frequency, f(LFXT1)
(see Note 2)
XT1 selected mode XTS 1
Ceramic resonator
450
8000
kHz
(see Note 2)
XT1 selected mode, XTS=1
Crystal
1000
8000
kHz
Processor frequency f
(MCLK signal)
VCC = 1.8 V
dc
4.15
MHz
Processor frequency f(system) (MCLK signal)
VCC = 3.6 V
dc
8
MHz
NOTES: 1. The LFXT1 oscillator in LF-mode requires a resistor of 5.1 M
Ω from XOUT to VSS when VCC <2.5 V. The LFXT1 oscillator in
XT1-mode accepts a ceramic resonator or a crystal frequency of 4 MHz at VCC ≥ 2.2 V. The LFXT1 oscillator in XT1-mode accepts
a ceramic resonator or a crystal frequency of 8 MHz at VCC ≥ 2.8 V.
2. The LFXT1 oscillator in LF-mode requires a watch crystal. The LFXT1 oscillator in XT1-mode accepts a ceramic resonator or crystal.
1.8 V
3.6 V
2.7 V 3 V
4.15 MHz
8.0 MHz
Supply Voltage V
Supply voltage range, ’F12x,
during flash memory programming
Supply voltage range,
’F12x, during
program execution
NOTE: Minimum processor frequency is defined by system clock. Flash program or erase operations require a minimum VCC of 2.7 V.
f(system) (MHz)
Figure 1. Frequency vs Supply Voltage, MSP430F12x
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