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| 型號(hào)： | MSP430F123IPWR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO28 |
| 封裝： | GREEN, PLASTIC, TSSOP-28 |
| 文件頁(yè)數(shù)： | 16/42頁(yè) |
| 文件大?。?/td> | 788K |
| 代理商： | MSP430F123IPWR |
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MSP430x12x
MIXED SIGNAL MICROCONTROLLER
SLAS312C JULY 2001 REVISED SEPTEMBER 2004
23
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
Flash Memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
VCC(PGM/
ERASE)
Program and Erase supply voltage
2.7
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from VCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
see Note 1
2.7 V/ 3.6 V
4
ms
tCMErase
Cumulative mass erase time
see Note 2
2.7 V/ 3.6 V
200
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for 1st byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
see Note 3
21
t
tBlock, End
Block program end-sequence wait time
see Note 3
6
tFTG
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297x1/fFTG,max = 5297x1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine; tFTG = 1/fFTG.
JTAG Interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
f
TCK input frequency
see Note 1
2.2 V
0
5
MHz
fTCK
TCK input frequency
see Note 1
3 V
0
10
MHz
RInternal
Internal pull-down resistance on TEST
see Note 2
2.2 V/ 3 V
25
60
90
k
Ω
NOTES: 1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TEST pull-down resistor implemented in all versions.
JTAG Fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
VFB
Voltage level on TEST for fuse-blow
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES: 1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched
to bypass mode.
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參數(shù)描述 |
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| MSP430F123IRHB | 制造商:Texas Instruments 功能描述: |
| MSP430F123IRHBR | 功能描述:16位微控制器 - MCU 8kB Flash 256B RAM USART + Comparator RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT |
| MSP430F123IRHBT | 功能描述:16位微控制器 - MCU 8kB Flash 256B RAM USART + Comparator RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT |
| MSP430F133 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER |
| MSP430F133IPAG | 功能描述:16位微控制器 - MCU 8kB Flash 256B RAM 12bit ADC + 1 USART RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT |
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