參數(shù)資料
型號(hào)： MSP430F2121TRGE
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQCC24
封裝： PLASTIC, QFN-24
文件頁(yè)數(shù)： 66/95頁(yè)
文件大?。?/td> 1832K
代理商： MSP430F2121TRGE
MSP430x23x, MSP430x24x(1), MSP430x2410
MIXED SIGNAL MICROCONTROLLER
SLAS547D -- JUNE 2007 -- REVISED APRIL 2010
69
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from DVCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
SeeNote1
2.7 V/ 3.6 V
4
ms
tCMErase
Cumulative mass erase time
2.7 V/ 3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25°C
100
years
tWord
Word or byte program time
SeeNote2
35
tBlock, 0
Block program time for first byte or word
SeeNote2
30
tBlock, 1-63
Block program time for each additional byte or word SeeNote2
21
t
tBlock, End
Block program end-sequence wait time
SeeNote2
6
tFTG
tMass Erase
Mass erase time
SeeNote2
10593
tSeg Erase
Segment erase time
SeeNote2
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VRAMh
SeeNote1
CPU halted
1.6
V
NOTE 1. This parameter defines the minimum supply voltage when the data in program memory RAM remain unchanged. No program execution
should take place during this supply voltage condition.
JTAG interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK inp t freq enc
See Note 1
2.2 V
0
5
MH
fTCK
TCK input frequency
See Note 1
3V
0
10
MHz
RInternal
Internal pullup resistance on TMS, TCK, TDI/TCLK
SeeNote2
2.2 V/ 3 V
25
60
90
k
NOTES: 1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TMS, TDI/TCLK, and TCK pullup resistors are implemented in all versions.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSP430F2121TRGER 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU 4kB FL 256B RAM Comp RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2121TRGET 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU 4kB FL 256B RAM Comp RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2122IPW 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr Microcontroller RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2122IPWR 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr Microcntrlr RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F2122IRHB 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
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