參數(shù)資料
型號: MSP430F2122IRHBT
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQCC32
封裝: GREEN, PLASTIC, QFN-32
文件頁數(shù): 13/81頁
文件大?。?/td> 1738K
代理商: MSP430F2122IRHBT
MSP430F21x2
MIXED SIGNAL MICROCONTROLLER
SLAS578G -- NOVEMBER 2007 -- REVISED DECEMBER 2009
20
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
active mode supply current (into VCC) excluding external current (see Notes 1 and 2)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX UNIT
I
Active mode (AM)
fDCO =fMCLK =fSMCLK =1MHz,
fACLK = 32768 Hz,
Program executes from flash,
BCSCTL1 CALBC1 1MHZ
2.2 V
250
340
A
IAM, 1MHz
Active mode (AM)
current (1 MHz)
BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
CPUOFF = 0, SCG0 = 0, SCG1 = 0,
OSCOFF = 0
3V
350
450
A
I
Active mode (AM)
fDCO =fMCLK =fSMCLK =1MHz,
fACLK = 32768 Hz,
Program executes in RAM,
BCSCTL1 CALBC1 1MHZ
2.2 V
220
A
IAM, 1MHz
Active mode (AM)
current (1 MHz)
BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
CPUOFF = 0, SCG0 = 0, SCG1 = 0,
OSCOFF = 0
3V
300
A
fMCLK =fSMCLK =
fACLK = 32768 Hz/8 = 4096 Hz,
--40°Cto85°C
2 2 V
2
5
I
Active mode (AM)
fACLK = 32768 Hz/8 = 4096 Hz,
fDCO =0Hz,
Program executes in flash,
105_C
2.2 V
6
A
IAM, 4kHz
Active mode (AM)
current (4 kHz)
Program executes in flash,
SELMx = 11, SELS = 1,
DIVMx = DIVSx = DIVAx = 11,
--40°Cto85°C
3 V
3
7
A
DIVMx DIVSx DIVAx 11,
CPUOFF = 0, SCG0 = 1, SCG1 = 0,
OSCOFF = 0
105_C
3 V
9
fMCLK =fSMCLK =fDCO(0, 0) ≈ 100 kHz,
f
0 Hz
--40°Cto85°C
2 2 V
60
85
I
Active mode (AM)
fACLK =0Hz,
Program executes in flash,
105_C
2.2 V
90
A
IAM, 100kHz
Active mode (AM)
current (100 kHz)
Program executes in flash,
RSELx = 0, DCOx = 0,
CPUOFF = 0 SCG0 = 0 SCG1 = 0
--40°Cto85°C
3 V
72
95
A
CPUOFF = 0, SCG0 = 0, SCG1 = 0,
OSCOFF = 1
105_C
3 V
100
NOTES: 1. All inputs are tied to 0 V or VCC. Outputs do not source or sink any current.
2. The currents are characterized with a Micro Crystal CC4V-T1A SMD crystal with a load capacitance of 9 pF.
The internal and external load capacitance is chosen to closely match the required 9 pF.
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