參數(shù)資料
型號(hào): MSP430F2330TRHA
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQCC40
封裝: GREEN, PLASTIC, QFN-40
文件頁數(shù): 40/67頁
文件大小: 4033K
代理商: MSP430F2330TRHA
MSP430F23x0
MIXED SIGNAL MICROCONTROLLER
SLAS518C -- AUGUST 2006 -- REVISED OCTOBER 2009
45
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash Timing Generator frequency
257
476 kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5 mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7 mA
tCPT
Cumulative program time (see Note 1)
2.2 V/3.6 V
10 ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25°C
100
years
tWord
Word or byte program time
SeeNote2
30
tFTG
tBlock, 0
Block program time for first byte or word
SeeNote2
25
tFTG
tBlock, 1-63
Block program time for each additional byte or word SeeNote2
18
tFTG
tBlock, End
Block program end-sequence wait time
SeeNote2
6
tFTG
tMass Erase
Mass erase time
SeeNote2
10593
tFTG
tSeg Erase
Segment erase time
SeeNote2
4819
tFTG
NOTES: 1. Thecumulativeprogramtimemustnotbeexceededwhenwritingtoa64-byteflashblock.Thisparameterappliestoallprogramming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
V(RAMh)
RAM retention supply voltage (see Note)
CPU halted
1.6
V
NOTE : ThisparameterdefinestheminimumsupplyvoltageVCCwhenthedatainRAMremainsunchanged.Noprogramexecutionshouldhappen
during this supply voltage condition.
JTAG interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK input frequency
See Note 1
2.2 V
0
5 MHz
fTCK
TCK input frequency
See Note1
3V
0
10 MHz
RInternal
Internal pullup resistance on TMS, TCK, TDI/TCLK SeeNote2
2.2 V/ 3 V
20
35
55
k
NOTES: 1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TMS, TDI/TCLK, and TCK pull-up resistors are implemented in all versions.
JTAG fuse (see Note)
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(FB) Supply voltage during fuse-blow condition
TA =25°C
2.5
V
VFB
Voltage level on TDI/TCLK for fuse-blow: F versions
6
7
V
IFB
Supply current into TDI/TCLK during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTE : Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched
to bypass mode.
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