參數(shù)資料
型號(hào)： MSP430F417IRTD
廠商： TEXAS INSTRUMENTS INC
元件分類(lèi)： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PQCC64
封裝： PLASTIC, QFN-64
文件頁(yè)數(shù)： 31/61頁(yè)
文件大?。?/td> 1156K
代理商： MSP430F417IRTD
MSP430x41x
MIXED SIGNAL MICROCONTROLLER
SLAS340I MAY 2001 REVISED MARCH 2008
37
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
2.7
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from DVCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
See Note 1
2.7 V/ 3.6 V
10
ms
tCMErase
Cumulative mass erase time
See Note 2
2.7 V/ 3.6 V
200
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for 1st byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
See Note 3
21
t
tBlock, End
Block program end-sequence wait time
See Note 3
6
tFTG
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297x1/fFTG,max = 5297x1/476kHz). To
achieve the required cumulative mass erase time the flash controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the flash controller’s state machine (tFTG = 1/fFTG).
JTAG interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK input frequency
see Note 1
2.2 V
0
5
MHz
fTCK
TCK input frequency
see Note 1
3 V
0
10
MHz
RInternal
Internal pull-up resistance on TMS, TCK, TDI/TCLK see Note 2
2.2 V/ 3 V
25
60
90
k
NOTES: 1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TMS, TDI/TCLK, and TCK pullup resistors are implemented in all versions.
JTAG fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
MIN
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
Voltage level on TDI/TCLK for fuse blow
MSP430C41x
3.5
3.9
V
VFB
Voltage level on TDI/TCLK for fuse-blow
MSP430F41x
6
7
V
IFB
Supply current into TDI/TCLK during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES: 1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched
to bypass mode.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSP430F417IRTDR 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F417IRTDT 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MSP430F417TDE1 制造商:Texas Instruments 功能描述:IC MCU 16BIT 32KB FLASH DIE
MSP430F417TDE2 制造商:Texas Instruments 功能描述:IC MCU 16BIT 32KB FLASH DIE
MSP430F423AIPM 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
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