參數(shù)資料
型號(hào): MT16HTS25664HY-53EXX
元件分類: DRAM
英文描述: 256M X 64 DDR DRAM MODULE, ZMA200
封裝: LEAD FREE, MO-224, SODIMM-200
文件頁(yè)數(shù): 14/14頁(yè)
文件大小: 325K
代理商: MT16HTS25664HY-53EXX
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron's Web site. Module speed grades cor-
relate with component speed grades.
Table 8: Module and Component Speed Grades
DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade
Component Speed Grade
-1GA
-187E
-80E
-25E
-800
-25
-667
-3
-53E
-37E
-40E
-5E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DRAM Operating Conditions
PDF: 09005aef821e5bf3
hts16c256_512x64h.pdf - Rev. E 3/10 EN
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2006 Micron Technology, Inc. All rights reserved.
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