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參數(shù)資料
| 型號： | MT3S04AU |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | USM, 2-2E1A, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MT3S04AU |
MT3S04AU
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S04AU
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.2dB (f = 1 GHz)
High gain: Gain = 12.5dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Base current
IC
40
mA
Collector current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
fT (1)
VCE = 1 V, IC = 5 mA
2
5
Transition frequency
fT (2)
VCE = 3 V, IC = 7 mA
5
7
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
9.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
7.5
12.5
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.3
2.2
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.2
2
dB
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
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