參數(shù)資料
型號(hào): MT46H256M32LGMC-6:A
元件分類(lèi): DRAM
英文描述: 256M X 32 DDR DRAM, 5 ns, PBGA240
封裝: 14 X 14 MM, GREEN, PLASTIC, WFBGA-240
文件頁(yè)數(shù): 2/106頁(yè)
文件大?。?/td> 3431K
Figure 3: Functional Block Diagram (x32)
RAS#
CAS#
Row-
address
MUX
CK
CS#
WE#
CK#
Control
logic
Column-
address
counter/
latch
Standard mode
register
Extended mode
register
Command
decode
Address,
BA0, BA1
CKE
Address
register
I/O gating
DM mask logic
Bank 0
memory
array
Bank 0
row-
address
latch
and
decoder
Bank
control
logic
Bank 1
Bank 2
Bank 3
Refresh
counter
32
2
32
2
Input
registers
4
RCVRS
4
64
8
64
CK
out
Data
DQS
Mask
Data
CK
in
DRVRS
MUX
DQS
generator
32
64
DQ[31:0]
DQS0
DQS1
DQS2
DQS3
4
Read
latch
Write
FIFO
and
drivers
1
COL 0
Sense amplifiers
DM0
DM1
DM2
DM3
CK
Column
decoder
2Gb: x16, x32 Mobile LPDDR SDRAM
Functional Block Diagrams
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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