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參數(shù)資料
| 型號(hào)： | MT4C1M16E5DJ-6 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | EDO DRAM |
| 中文描述： | EDO公司的DRAM |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 385K |
| 代理商： | MT4C1M16E5DJ-6 |
9
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc
16Mb: 1 MEG x16
EDO DRAM
AC ELECTRICAL CHARACTERISTICS (continued)
(Notes: 2, 3, 9, 10, 11, 12; notes appear on pages 10-11); (V
CC
[MIN]
￡
V
CC
￡
V
CC
[MAX])
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS#
during HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (1,024 cycles)
Refresh period (1,024 cycles) S version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE#
WRITE command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
ORD
MIN
0
MAX
MIN
0
MAX
UNITS NOTES
ns
t
PC
20
47
25
56
ns
ns
ns
ns
ns
ns
ns
μs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
31
31
19
21
t
PRWC
t
RAC
t
RAD
t
RAH
t
RAS
t
RASP
t
RASS
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
RP
t
RPC
t
RPS
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WHZ
t
WP
t
WPZ
t
WRH
t
WRP
50
60
9
9
50
50
100
84
11
0
0
12
10
60
60
100
104
14
0
0
10,000
125,000
10,000
125,000
22, 25
23, 27
25
16
128
16
128
30
5
90
0
13
116
67
13
2
8
38
0
0
5
10
8
8
40
5
105
0
15
140
79
15
2
10
45
0
0
5
10
10
10
23
32
13
50
50
32
13, 25
12
15
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| MT4LC1M16E5DJ-6S | EDO DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MT4C1M16E5TG-5 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:EDO DRAM |
| MT4C1M16E5TG-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:EDO DRAM |
| MT4C2M8B1DJ-6 | 制造商:Micron Technology Inc 功能描述: |
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| MT4C40004 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4 MEG x 4 DRAM |
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