參數(shù)資料
型號(hào)： MT55L128V32F1T-11
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： SRAM
英文描述： 128K X 32 ZBT SRAM, 8.5 ns, PQFP100
封裝： PLASTIC, MS-026, TQFP-100
文件頁(yè)數(shù)： 14/26頁(yè)
文件大?。?/td> 372K
代理商： MT55L128V32F1T-11
21
4Mb: 256K x 18, 128K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
2003, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
FLOW-THROUGH ZBT SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to ISB2z. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all in-
puts except ZZ become disabled and all outputs go to
High-Z.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, ISB2z is guaranteed
after the time tZZI is met. Any READ or WRITE opera-
tion pending when the device enters SNOOZE MODE
is not guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed. Similarly, when exiting
SNOOZE MODE during tRZZ, only a DESELECT or
READ cycle should be given.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Current during SNOOZE MODE
ZZ
≥ VIH
ISB2Z
10
mA
Current during SNOOZE MODE
ZZ
≥ VIH
ISB2ZP
1mA
(P Version)
ZZ active to input ignored
tZZ
0
tKHKH
ns
1
ZZ inactive to input sampled
tRZZ
0
tKHKH
ns
1
ZZ active to snooze current
tZZI
tKHKH
ns
1
ZZ inactive to exit snooze current
tRZZI
0
ns
1
SNOOZE MODE WAVEFORM
t
ZZ
I
SUPPLY
CLK
ZZ
t
RZZ
ALL INPUTS
(except ZZ)
DON’T CARE
I
ISB2Z
t
ZZI
t
RZZI
Outputs (Q)
High-Z
DESELECT
or READ Only
NOTE: 1. This parameter is sampled.
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