參數(shù)資料
型號： MTB3N120E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 9/12頁
文件大小： 322K
代理商： MTB3N120E
MTB3N120E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0
0.1
0.01
1.0E–05
t, TIME (s)
D = 0.5
0.2
r
(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.1
0.02
0.01
120
100
40
0
25
50
75
100
125
150
100
10
1.0
0.01
0.1
1
10
100
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Figure 13. Thermal Response
VGS = 20 V
SINGLE PULSE
TC = 25°C
SINGLE PULSE
80
60
20
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1,000
10,000
0.1
100
s
10
s
1 ms
10 ms
dc
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+01
1.0E+00
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05
ID = 3 A
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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