參數(shù)資料
型號(hào)： MTB50N06VL
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁(yè)數(shù)： 6/12頁(yè)
文件大小： 100K
代理商： MTB50N06VL
MTB50N06VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
0
0.5
1
0
10
60
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
13
5
10
0
20
50
60
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
9
18
54
0.02
0.06
0.04
0.01
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
020
30
60
0
0.02
0.04
0.035
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
-50
0.6
0.8
1.2
1.6
1.8
0
1020
4050
60
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
-25
0
25
50
75
100
125
150
VGS = 5 V
ID = 21 A
TJ = 25°C
VGS = 10 V
8 V
6 V
5 V
3 V
VGS = 5 V
TJ = 100°C
25°C
-55°C
25°C
TJ = 25°C
VGS = 5 V
10 V
VGS = 0 V
TJ = 125°C
30
50
1.5
30
27
10
30
VDS ≥ 10 V
TJ = -55°C
100
°C
4 V
2
46
40
63
0
1
1.4
1000
100°C
2
2.5
3
90
80
70
20
40
72
0.05
0.03
36
45
40
50
0.01
0.03
0.025
0.4
0.2
0
7 V
70
80
90
81
90
0.015
0.005
70
80
90
2
175
相關(guān)PDF資料
PDF描述
MTB50P03HDLT4 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
MTB52N06VLT4 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VL 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VLT4G 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VT4 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTB50N06VLT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
MTB50N06VT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
MTB50P03HDL 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLG 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLT4 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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