參數(shù)資料
型號: MTB52N06VT4
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數(shù): 6/12頁
文件大?。?/td> 114K
代理商: MTB52N06VT4
MTB52N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
100
80
60
40
20
0
2
0
7.5
7
5
3
2.5
VDS ≥ 10 V
TJ = -55°C
100°C
25°C
VGS = 10 V
0.035
20
0
0.03
0
40
60
80
100
TJ = 100°C
25°C
-55°C
TJ = 25°C
0.023
0.015
5
VGS = 10 V
15 V
VGS = 10 V
ID = 26 A
1.75
1.5
1
0.5
0.25
-50
-25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
1
0
1020
30405060
468
10
100
80
60
40
20
0
24
6
8
0.02
0.015
0.01
0.021
0.019
0.017
25
45
65
85
105
100
10
100°C
175
2
110
90
70
50
30
10
13
57
9
90
70
50
30
10
110
3.5
4.5
5.5
6.5
0.025
0.005
30
10
50
70
90
110
0.022
0.020
0.018
0.016
15
35
55
75
95
1.25
0.75
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