- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98046 > MTB60N05HDG (ON SEMICONDUCTOR) 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTB60N05HDG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 161K |
| 代理商： | MTB60N05HDG |
MTB60N05HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
50
–
55
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = –25°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current
(VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.5
4.5
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 30 Adc)
RDS(on)
–
0.010
0.014
Ohms
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ = 125°C)
VDS(on)
–
1.0
0.75
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 20 Adc)
gFS
15
48
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
2775
4000
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
750
1070
Transfer Capacitance
f = 1.0 MHz)
Crss
–
150
300
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
21
40
ns
Rise Time
(VDD = 25 Vdc, ID = 60 Adc,
tr
–
570
1150
Turn–Off Delay Time
(VDD 25 Vdc, ID 60 Adc,
VGS = 5.0 Vdc, RG = 9.1 )
td(off)
–
86
170
Fall Time
tf
–
200
400
Gate Charge
QT
–
42
62
nC
g
(VDS = 40 Vdc, ID = 60 Adc,
Q1
–
8.0
–
(VDS 40 Vdc, ID 60 Adc,
VGS = 5.0 Vdc)
Q2
–
24
–
Q3
–
17
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.95
0.85
1.1
–
Vdc
Reverse Recovery Time
trr
–
50
–
ns
y
(IS = 30 Adc, VGS = 0 Vdc,
ta
–
34
–
(IS 30 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s)
tb
–
15
–
Reverse Recovery Stored Charge
QRR
–
0.085
–
C
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB60N05HDLT4 | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N06HDT4 | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N06HD | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N06HDT4 | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N03HDL | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB60N05HDL | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
| MTB60N05HDLT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS |
| MTB60N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK |
| MTB60N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。