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參數(shù)資料
| 型號： | MTB75N03HDLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 256K |
| 代理商： | MTB75N03HDLT4 |
MTB75N03HDL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage
Current versus Voltage
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25°C
55°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
VGS = 5 V
VGS = 10 V
ID = 37.5 A
0.4
0.8
1.2
1.6
2
0
0.2
0.6
1
1.4
1.8
30
60
90
120
150
0
2
2.5
3.5
4
4.5
1.5
30
60
90
120
150
0
3
30
60
90
120
150
0
0.01
0.002
0.008
0.006
0.004
25
50
100
125
150
0
0.005
0.006
0.007
0.008
0.009
0.004
75
25
100
150
50
25
0
50
75
125
0.4
0.8
1.2
1.6
2
0
10
20
30
0
5
15
25
10
100
1000
10000
1
10 V
100°C
25°C
TJ = 125°C
100°C
25°C
TJ = 55°C
3.5 V
3 V
4 V
2.5 V
4.5 V
5 V
8 V
6 V
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