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參數(shù)資料
| 型號(hào)： | MTD20N03HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 180K |
| 代理商： | MTD20N03HDLT4 |
MTD20N03HDL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
43
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current
(VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
5.0
2.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk ≥ 2.0) (3)
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)
—
0.034
0.030
0.040
0.035
Ohm
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
—
0.55
—
0.8
0.7
Vdc
Forward Transconductance
(VDS = 5.0 Vdc, ID = 10 Adc)
gFS
10
13
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
880
1260
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
300
420
Transfer Capacitance
f = 1.0 MHz)
Crss
—
80
150
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
15 Vd
I
20 Ad
td(on)
—
13
20
ns
Rise Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS =5 0Vdc
tr
—
212
238
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 9.1 )
td(off)
—
23
40
Fall Time
G
)
tf
—
84
140
Gate Charge
(See Figure 8)
(V
24 Vd
I
20 Ad
QT
—
13.4
18.9
nC
(See Figure 8)
(VDS = 24 Vdc, ID = 20 Adc,
Q1
—
3.0
—
( DS
, D
,
VGS = 5.0 Vdc)
Q2
—
7.3
—
Q3
—
6.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk ≥ 2.0) (3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.95
0.87
1.1
—
Vdc
Reverse Recovery Time
(See Figure 15)
(I
20 Ad
V
0 Vd
trr
—
33
—
ns
(See Figure 15)
(IS = 20 Adc, VGS = 0 Vdc,
ta
—
23
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
10
—
Reverse Recovery Stored Charge
QRR
—
33
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516 A).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N03HL | 制造商:Motorola Inc 功能描述:20N03HL |
| MTD20N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
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