參數(shù)資料
型號(hào): MTD20N06HD-1
廠(chǎng)商: ON SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369D-01, DPAK-3
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 287K
代理商: MTD20N06HD-1
MTD20N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VDS, DRAINTOSOURCE VOLTAGE (Volts)
VGS, GATETOSOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
8
16
24
40
Figure 1. OnRegion Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
010
20
30
40
0.020
0.028
0.036
0.044
0.052
0.028
0.030
0.032
0.036
0.040
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.6
Figure 5. OnResistance Variation with
Temperature
32
VGS = 10 V
8 V
9 V
5 V
6 V
TJ = 25°C
7 V
23
4
5
7
68
VDS ≥ 10 V
100
°C
25
°C
0.048
0.040
0.032
0.024
VGS = 10 V
55
°C
25
°C
010
20
30
40
0.038
0.034
50
25
0
25
50
75
100
125
150
1.4
TJ = 55°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 10 V
ID = 10 A
相關(guān)PDF資料
PDF描述
MTD20N06HD 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06HD1 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
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