參數(shù)資料
型號: MTD20N06HDLT4
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/12頁
文件大小: 293K
代理商: MTD20N06HDLT4
MTD20N06HDL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VGS, GATE–TO–SOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. On–Region Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
0
10
20
30
40
0
0.02
0.04
0.06
0.07
0.025
0.03
0.04
0.05
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.6
Figure 5. On–Resistance Variation with
Temperature
1.5
2
2.5
3
4
3.5
4.5
VDS ≥ 10 V
100
°C
25
°C
0.05
0.03
0.01
VGS = 5 V
– 55
°C
25
°C
0
10
20
30
40
0.045
0.035
– 50
– 25
0
25
50
75
100
125
150
1.4
TJ = – 55°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
5 V
VGS = 5 V
ID = 10 A
0
0.4
0.8
1.2
1.6
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
20
10
TJ = 25°C
2.5 V
0.2
0.6
1.8
1.4
1.0
30
3 V
3.5 V
4 V
4.5 V
5 V
6 V
VGS = 10 V
40
8 V
Figure 6. Drain–to–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
10
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
0
10
30
20
VGS = 0 V
TJ = 125°C
100
°C
1
40
60
50
25
°C
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