參數(shù)資料
型號： MTD20N06HDT4
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 6/12頁
文件大?。?/td> 274K
代理商： MTD20N06HDT4
MTD20N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
VGS, GATE–TO–SOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
8
16
24
40
Figure 1. On–Region Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
0
10
20
30
40
0.020
0.028
0.036
0.044
0.052
0.028
0.030
0.032
0.036
0.040
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.6
Figure 5. On–Resistance Variation with
Temperature
32
VGS = 10 V
8 V
9 V
5 V
6 V
TJ = 25°C
7 V
2
3
4
5
7
6
8
VDS ≥ 10 V
100
°C
25
°C
0.048
0.040
0.032
0.024
VGS = 10 V
– 55
°C
25
°C
0
10
20
30
40
0.038
0.034
– 50
– 25
0
25
50
75
100
125
150
1.4
TJ = – 55°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 10 V
ID = 10 A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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