- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98046 > MTD2955ET4 (ON SEMICONDUCTOR) 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTD2955ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 278K |
| 代理商： | MTD2955ET4 |
MTD2955E
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
7
0
2
4
7
8
10
0
6
12
18
24
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
6
8
10
0
8
16
20
24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
10
14
18
24
0.1
0.3
0.5
0.8
0.9
0
6
12
16
20
24
0.20
0.28
0.36
0.44
0.48
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.6
1.8
15
25
35
45
60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
VGS =10V
9
6
5
3
1
TJ = 100°C
25°C
55°C
TJ = 25°C
VGS =10V
5 V
6 V
7 V
8 V
15 V
9 V
4
12
3
4
5
9
0.7
0.6
0.4
0.2
2
6 8
12
16
20 22
2
8
4
14
18
10
0.24
0.32
0.40
22
1.4
1.2
1.0
20
30
40
50
55
VGS = 10 V
ID =6 A
100°C
VGS = 10 V
VGS =0V
100°C
25°C
TJ = 125°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD2955VT4 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2N40E | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD2N50E1 | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD2N50E | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD3302 | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955VG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。