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參數(shù)資料
| 型號： | MTD2955VT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MTD2955VT4G |
MTD2955V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (Note 5)
V
(BR)DSS
60
58
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
I
GSS
100
nAdc
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (Note 5)
V
GS(th)
2.0
2.8
5.0
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 6.0 Adc)
(Cpk
≥
1.5) (Note 5)
R
DS(on)
0.185
0.230
DraintoSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 12 Adc)
(V
GS
= 10 Vdc, I
D
= 6.0 Adc, T
J
= 150
°
C)
V
DS(on)
2.9
2.5
Vdc
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
g
FS
3.0
5.0
mhos
C
iss
550
770
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
200
280
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
C
rss
50
100
TurnOn Delay Time
t
d(on)
15
30
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 12 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 )
t
r
50
100
TurnOff Delay Time
t
d(off)
24
50
Fall Time
t
f
39
80
Gate Charge
Q
T
19
30
nC
(V
DS
= 48 Vdc, I
= 12 Adc,
V
GS
= 10 Vdc)
Q
1
4.0
Q
2
9.0
Q
3
7.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(I
S
= 12 Adc, V
GS
= 0 Vdc)
(I
S
= 12 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
1.8
1.5
3.0
Vdc
Reverse Recovery Time
t
rr
115
ns
(I = 12 Adc V
= 12 Adc, V
= 0 Vdc
/dt = 100 A/ s)
dI
S
/dt 100 A/ s)
t
a
90
t
b
25
Reverse Recovery Stored
Charge
Q
RR
0.53
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
7.5
nH
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values. C
pk
=
3 x SIGMA
Max limit Typ
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