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參數(shù)資料
| 型號： | MTD3055V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
| 中文描述： | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 380K |
| 代理商： | MTD3055V |
M
MTD3055V Rev. A
MTD3055V
N-Channel Enhancement Mode Field Effect Transistor
Features
12 A, 60 V. R
DS(ON)
= 0.15
@ V
GS
= 10 V
Low gate charge.
Fast switching speed.
High performance technology for low R
DS(ON)
.
1999 Fairchild Semiconductor Corporation
August 1999
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General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD3055V | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| MTD3055V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK Rail |
| MTD3055VL | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD3055VL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| MTD3055VL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
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