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參數(shù)資料
| 型號(hào)： | MTD4N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D, DPAK-3 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | MTD4N20E |
MTD4N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
263
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
0.98
1.2
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125°C)
VDS(on)
3.5
5.8
5.0
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
gFS
1.5
2.1
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
311
430
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
66
80
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
11
20
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
10
17
ns
Rise Time
(VDD = 100 Vdc, ID = 4.0 Adc,
VGS =10Vdc
tr
4.0
26
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
15
29
Fall Time
RG 9.1 )
tf
6.0
18
Gate Charge
(S
Fi
8)
QT
9.2
14
nC
(See Figure 8)
(VDS = 160 Vdc, ID = 4.0 Adc,
Q1
2.4
(VDS
160 Vdc, ID
4.0 Adc,
VGS = 10 Vdc)
Q2
4.1
Q3
5.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.92
0.82
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
123
ns
(See Figure 14)
(I =40Adc V
= 0 Vdc
ta
82
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
41
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
0.58
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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