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參數(shù)資料
| 型號： | MTD9N10EG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 246K |
| 代理商： | MTD9N10EG |
MTD9N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
02
4
7
8
10
0
8
12
10
18
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.5
5.5
6.5
6.0
7.5
0
10
14
16
18
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
10
14
18
0.15
0.20
0.30
0.45
0
6
12
16
0.15
0.19
0.23
0.25
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
1.7
1.9
30
50
70
0.1
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
25°C
100°C
VGS =10V
9
6
5
3
1
TJ = 25°C
VGS =10V
4 V
5 V
25°C
100°C
VGS =0V
12
3.0
4.0 4.5 5.0
7.0
0.40
0.35
0.25
26
8
12
16
2
8
414
18
10
0.17
0.21
1.5
0.7
0.5
40
60
100
16
14
2.5
VGS = 10 V
TJ = 100°C
25°C
55°C
VGS = 10 V
ID =4.5 A
TJ = 125°C
15 V
6
4
2
7 V
2
6
8
4
8.0
9.0
8.5
TJ = 55°C
1.1
1.3
0.9
1.0
80
90
8 V
6 V
0.10
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