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參數(shù)資料
| 型號： | MTDF1C02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MTDF1C02HDR2 |
MTDF1C02HD
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Polarity
Symbol
Typical
Max
Unit
Drain–to–Source Voltage
N & P–Ch
VDSS
–
20
V
Drain–to–Gate Voltage (RGS = 1.0 M)
N & P–Ch
VDGR
–
20
V
Gate–to–Source Voltage – Continuous
N & P–Ch
VGS
–
± 8.0
V
1
″ SQ.
FR–4 or G–10 PCB
Figure A below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
N–Channel
RTHJA
PD
ID
IDM
80
–
100
1.25
10
2.8
2.3
23
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure B below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
N–Channel
RTHJA
PD
ID
IDM
160
–
200
0.63
5.0
1.7
1.6
16
°C/W
Watts
mW/
°C
A
1
″ SQ.
FR–4 or G–10 PCB
Figure A below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
P–Channel
RTHJA
PD
ID
IDM
80
–
100
1.25
10
2.3
1.9
19
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure B below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
P–Channel
RTHJA
PD
ID
IDM
160
–
200
0.63
5.0
1.6
1.3
13
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure B below
2 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
N & P–Ch
RTHJA
PD
ID
IDM
240
–
300
0.42
3.33
1.3
1.1
11
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
–
– 55 to 150
°C
1. Repetitive rating; pulse width limited by maximum junction temperature.
Figure B. Minimum FR–4 or G–10 PCB
Figure A. 1
, Square FR–4 or G–10 PCB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF1N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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