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參數(shù)資料
| 型號： | MTP33N10 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| 中文描述： | TMOS是33安培，功率場效應(yīng)晶體管100伏特的RDS（on）\u003d 0.06歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | MTP33N10 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
5.5
R
(
R
R
0
2
4
6
8
10
0
30
50
60
90
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
12
24
36
48
60
0.02
0.03
0.05
0.07
0.09
5
17
29
47
59
65
0.037
0.041
0.045
0.049
0.053
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.6
0.8
1.2
1.6
2.0
20
40
60
80
90
100
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
–25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
80
70
20
40
1
3
5
7
9
10
9 V
5 V
6 V
7 V
8 V
VGS = 10 V
0
2.0
30
50
60
90
80
70
20
40
10
3.0
4.0
5.0
6.0
7.0
2.5
3.5
4.5
6.5
7.5
8.5
9.5
8.0
9.0
10
0.08
0.06
0.04
6
18
30
42
54
66
0.051
0.047
0.043
0.039
11
23
35
53
41
1.0
1.4
1.8
30
50
70
TJ = 125
°
C
25
°
C
100
°
C
VGS = 10 V
15 V
VGS = 10 V
ID = 16.5 A
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|---|---|
| MTP33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
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