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參數(shù)資料
| 型號： | MTP33N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| 中文描述： | 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | MTP33N10E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
10
1000
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0
25
50
75
100
125
500
450
300
250
200
150
100
ID = 33 A
400
350
100
1.0
10
150
t, TIME (ms)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
50
550
1.0E–05
1.0E–04
1.0E–02
0.1
1.0
0.01
1.0E–03
1.0E–01
1.0E+01
1.0E+00
100
μ
s
1 ms
10 ms
dc
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