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參數(shù)資料
| 型號： | MTP3N60FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
| 中文描述： | N溝道增強模式功率MOS晶體管（不適用溝道增強模式功率MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 199K |
| 代理商： | MTP3N60FI |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 225 V
R
G
= 15
(see test circuit, figure 3)
V
DD
= 480 V
R
G
= 15
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 2.5 A
V
GS
= 10 V
45
33
60
42
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 4 A
V
GS
= 10 V
200
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 4 A
V
GS
= 10 V
43
6
21
55
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 15
(see test circuit, figure 5)
I
D
= 4 A
V
GS
= 10 V
35
40
60
45
55
75
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
3.9
14
A
A
V
SD
(
)
t
rr
I
SD
= 3.9 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
2
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 4 A
V
DD
= 100 V
(see test circuit, figure 5)
420
3.7
18
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
MTP3N60/FI
3/10
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| MTP3S-E6-C | 功能描述:電纜束帶 3 BUNDLE TIE PLATE RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
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